DocumentCode
970689
Title
Dual-wavelength Bragg reflectors using GaAs/AlAs multilayers
Author
Lee, Charlotte P. ; Tsai, C.M. ; Tsang, J.S.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
29
Issue
22
fYear
1993
Firstpage
1980
Lastpage
1981
Abstract
Dual-wavelength Bragg reflectors have been demonstrated using GaAs/AlAs multilayer heterostructures. Desired reflection bands can be obtained by adding proper phase shifters in a GaAs/AlAs periodic multilayer structure. The structure is based on the digital representation of the addition of two periodic functions.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; integrated optics; optical films; reflectivity; semiconductor lasers; DBR laser diodes; GaAs-AlAs; GaAs/AlAs multilayer; digital representation; dual-wavelength Bragg reflectors; periodic functions; periodic multilayer structure; phase shifters; reflection bands; semiconductor multilayer heterostructures;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19931318
Filename
244623
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