DocumentCode
970769
Title
Superconducting properties and structure of Nb3 Ge samples prepared by high pressure D.C. sputtering and by solid state diffusion
Author
Letellier, B. ; Renard, J.C.
Author_Institution
Center de Recherches de la Compagnie Générale d´´Electricité, route de Nozay, Marcoussis, France
Volume
15
Issue
1
fYear
1979
fDate
1/1/1979 12:00:00 AM
Firstpage
498
Lastpage
501
Abstract
Properties of Nb-Ge A15 samples prepared by solid state diffusion and high pressure D.C. sputtering are reported and discussed in term of correlations between critical temperature, crystal structure and conditions of elaboration. In samples prepared by diffusion, it is found that the A15 phase may be obtained. So prepared compounds are in thermodynamical equilibrium whatever the annealing temperature up to 1 750°C and the quenching rate up to 1.6 104K/s. When the annealing temperature is very closed to the melting point of the compound, Tc onset may reach 16 K. In samples prepared by sputtering, it is found that the Nb/Ge ratio is not an important parameter while the substrate temperature is a very critical one. The highest Tc ´s, close to 22 K are correlated with the elimination of a defect which is the hexagonal Nb5 Ge3 phase. From both kinds of experiment it is suggested that, in our samples, oxygen almost has no effect on superconducting properties in the low Tc range but seems to be harmful to obtain critical temperatures in the 22 K range.
Keywords
Conducting films; Sputtering; Superconducting materials; Annealing; Cooling; Germanium; Niobium; Petroleum; Solid state circuits; Sputtering; Superconducting materials; Superconducting transition temperature; Vacuum technology;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1979.1060246
Filename
1060246
Link To Document