Ultrahigh-speed AlGaAs/GaAs ballistic collection transistors using carbon as p-type dopant

Author

Yamahata, S. ; Matsuoka, Yasutaka ; Ishibashi, Takayuki

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

Issue

fYear

1993

Firstpage

1996

Lastpage

1997

Abstract

Ultrahigh-speed performance is demonstrated in AlGaAs/GaAs ballistic collection transistors with a launcher (L-BCTs) grown by MOCVD using carbon (C)-doping of both a uniform base layer and a p⁺-layer for a potential cliff in the collector layer. A selfalignment fabrication technology characterised by a base-metal overlaid structure results in superior high-frequency performances of 100 and 144GHz for f_T, and f_max, respectively.

Keywords

III-V semiconductors; aluminium compounds; carbon; gallium arsenide; hot electron transistors; semiconductor doping; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 100 GHz; 144 GHz; AlGaAs-GaAs:C; MOCVD; base-metal overlaid structure; cutoff frequency; high current gain; high-frequency performance; launcher; maximum frequency of oscillation; p-type dopant; p⁺-layer doping; potential cliff; selfalignment fabrication technology; ultrahigh-speed ballistic collection transistors; uniform base layer doping;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19931329

Filename

244634

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=970801