Title :
Low-power performance of 0.5- mu m JFET for low-cost MMIC´s in personal communications
Author :
Scherrer, D. ; Kruse, J. ; Laskar, J. ; Feng, Milton ; Wada, M. ; Takano, Chiaki ; Kasahara, Jiro
Author_Institution :
Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA
Abstract :
The low-power microwave performance of an enhancement-mode ion-implanted GaAs JFET is reported. A 0.5- mu m*100- mu m E-JFET with a threshold voltage of V/sub th/=0.3 V achieved a maximum DC transconductance of g/sub m/=489 mS/mm at V/sub ds/=1.5 V and I/sub ds/=18 mA. Operating at 0.5 mW of power with V/sub ds/=0.5 V and I/sub ds/=1 mA, the best device on a 3-in wafer achieved a noise figure of 0.8 dB with an associated gain of 9.6 dB measured at 4 GHz. Across a 3-in wafer the average noise figure was F/sub min/=1.2 dB and the average associated gain was G/sub a/=9.8 dB for 15 devices measured. These results demonstrate that the E-JFET is an excellent choice for low-power personal communication applications.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; ion implantation; junction gate field effect transistors; personal communication networks; radiotelephony; solid-state microwave devices; 0.3 to 1.5 V; 0.5 mW; 0.5 micron; 0.8 dB; 1 mA; 1.2 dB; 18 mA; 489 mS; 9.6 dB; 9.8 dB; GaAs:Si; JFET; enhancement-mode; low cost MMIC; low-power microwave performance; personal communications; Cutoff frequency; Gain measurement; Gallium arsenide; Intrusion detection; MESFETs; MMICs; Microelectronics; Noise figure; Noise measurement; Voltage;
Journal_Title :
Electron Device Letters, IEEE
