InAlAs/InGaAs heterostructure FET´s processed with selective reactive-ion-etching gate-recess technology

Author

Agarwala, Sambhu ; Nummila, K. ; Adesida, Ilesanmi ; Caneau, Catherine ; Bhat, Rajaram

Author_Institution

Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA

Volume

14

Issue

9

fYear

1993

Firstpage

425

Lastpage

427

Abstract

A highly selective reactive-ion-etching process based on HBr plasma has been used as a gate-recess technique in fabrication of InAlAs/InGaAs heterostructure FETs. A typical 0.75- mu m-gate-length transistor exhibited a threshold voltage of -1.0 V, a maximum extrinsic transconductance of 600 mS/mm, an extrinsic current-gain cutoff frequency of 37 GHz, and a maximum frequency of oscillation of 90 GHz. These DC and RF device parameters compare favorably with those of a corresponding device gate-recessed with a selective wet-etching technique.<>

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; hydrogen compounds; indium compounds; semiconductor technology; solid-state microwave devices; sputter etching; -1 V; 0.75 micron; 37 GHz; 600 mS; 90 GHz; DC parameters; HBr plasma; InAlAs-InGaAs; RF device parameters; gate-recess technology; heterostructure FETs; selective reactive-ion-etching; Cutoff frequency; FETs; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; MODFETs; Plasmas; Threshold voltage; Transconductance;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.244718

Filename

244718