• DocumentCode
    971370
  • Title

    Submicrometre lift-off line with T-shaped cross-sectional form

  • Author

    Matsumura, Mieko ; Tsutsui, K. ; Naruke, Y.

  • Author_Institution
    Tokyo Institute of Technology, Faculty of Engineering, Tokyo, Japan
  • Volume
    17
  • Issue
    12
  • fYear
    1981
  • Firstpage
    429
  • Lastpage
    430
  • Abstract
    A fine metal line with T-shaped cross-sectional form was fabricated by a lift-off technique using the double-layer electron beam resist method. The minimum lower and upper widths of the T-shaped cross-section were 0.2 ¿m and 0.7 ¿m, respectively, and, keeping the lower width within 0.3 ¿m, we could increase the upper width at will.
  • Keywords
    electron beam lithography; field effect integrated circuits; integrated circuit technology; T-shaped cross-sectional form; double-layer electron beam resist method; field effect integrated circuits; lift-off technique; submicrometer lift-off line;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810298
  • Filename
    4245769
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971370