The effect of fluorine on MOSFET channel length

Author

Lin, Der-Gao ; Rost, Timothy A. ; Lee, Howard S. ; Lin, Dong-Yau ; Tsao, Alwin J. ; McKee, Benjamin

Author_Institution

Texas Instrum. Inc., Dallas, TX, USA

Volume

14

Issue

10

fYear

1993

Firstpage

469

Lastpage

471

Abstract

The effect of fluorine on MOS device channel length has been evaluated. Fluorine has been introduced into the transistor by self-aligned ion implantation after the lightly doped drain (LDD) implant. The impact of fluorine in the LDD region, and its effect on the electrically determined channel length (L/sub eff/), has been examined. Measurements taken from 0.6- mu m LDD MOSFETs show a significant dependence of the L/sub eff/ on fluorine implant dose. The n/sup +/ resistor also shows more width reduction compared to unfluorinated samples. The decrease in channel length reduction by adding fluorine in the LDD region may yield way to relieve short-channel effects for the continuous scaling of CMOS devices into the deep-submicrometer region.<>

Keywords

elemental semiconductors; fluorine; insulated gate field effect transistors; ion implantation; semiconductor doping; silicon; 0.6 micron; F implant dose; LDD region; MOS device; MOSFET; Si:F; channel length; lightly doped drain; n/sup +/ resistor; self-aligned ion implantation; short-channel effects; transistor; width reduction; Degradation; Dielectric breakdown; Hafnium; Hot carriers; Implants; Ion implantation; MOS devices; MOSFET circuits; Resistors; Tungsten;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.244733

Filename

244733