DocumentCode :
971449
Title :
Interferometric measurement of electron-hole pair recombination lifetime as a function of the injection level
Author :
Breglio, Giovanni ; Cutolo, Antonello ; Spirito, Paolo ; Zeni, Luigi
Author_Institution :
Dept. of Electron. Eng., Naples Univ., Italy
Volume :
14
Issue :
10
fYear :
1993
Firstpage :
487
Lastpage :
489
Abstract :
The authors describe an interferometric technique for the measurement of the recombination lifetime of electron-hole pairs as a function of their concentration, which can be measured with an error smaller than 10%. In addition, the approach is much more sensitive than the other optical methods described in the literature.<>
Keywords :
carrier density; carrier lifetime; electron-hole recombination; light interferometry; measurement by laser beam; semiconductors; time measurement; electron-hole pair recombination; injection level; interferometric technique; laser method; measurement; noncontact method; optical methods; recombination lifetime; Geometrical optics; Laser excitation; Optical devices; Optical interferometry; Optical pumping; Optical refraction; Optical sensors; Optical variables control; Pump lasers; Spontaneous emission;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/55.244739
Filename :
244739
Link To Document :
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