DocumentCode
971568
Title
High DC power 325 nm emission deep UV LEDs over sapphire [AlGaN]
Author
Chitnis, A. ; Adivarahan, V. ; Zhang, J.P. ; Wu, S. ; Sun, J. ; Pachipulusu, R. ; Mandavilli, V. ; Gaevski, M. ; Shatalov, M. ; Asif Khan, M.
Volume
38
Issue
25
fYear
2002
fDate
12/5/2002 12:00:00 AM
Firstpage
1709
Lastpage
1711
Abstract
Flip-chip 325 nm emission LEDs over sapphire with powers of 0.84 and 6.68 mW at 180 mA DC and 1 A pulsed pump currents are reported. A thermal management study shows the DC output power to be limited by the package heat dissipation.
Keywords
aluminium compounds; cooling; flip-chip devices; gallium compounds; light emitting diodes; thermal management (packaging); wide band gap semiconductors; 0.84 mW; 1 A; 180 mA; 325 nm; 6.68 mW; AlGaN; DC power; deep UV LEDs; flip-chip devices; output power; package heat dissipation; pulsed pump currents; sapphire substrate; thermal management study;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20021100
Filename
1137480
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