• DocumentCode
    971745
  • Title

    Equivalent circuit of GaAs dual gate MESFETs

  • Author

    Tsironis, Christos ; Meierer, R.

  • Author_Institution
    Laboratoires d´Electronique et de Physique Appliquée, Limeil-Brévannes, France
  • Volume
    17
  • Issue
    13
  • fYear
    1981
  • Firstpage
    477
  • Lastpage
    479
  • Abstract
    An equivalent circuit for GaAs dual gate MESFETs, valid for 2¿11 GHz, and including 28 elements, has been derived from measured 3-port s-parameters. The bidimensional transfer characteristic of the device made possible separate microwave measurement of each FET part and determination of precise starting values for the optimisation.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; equivalent circuits; gallium arsenide; solid-state microwave devices; 2-11 GHz; GaAs; MESFET; bidimensional transfer characteristic; dual gate; equivalent circuit; optimisation; solid state microwave devices;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810333
  • Filename
    4245805
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971745