Title :
An InGaAs-GaAs vertical-cavity surface-emitting laser grown on GaAs(311)A substrate having low threshold and stable polarization
Author :
Takahashi, M. ; Vaccaro, P. ; Fujita, K. ; Watanabe, T. ; Mukaihara, T. ; Koyama, F. ; Iga, K.
Author_Institution :
ATR Opt. & Radio Commun. Res. Labs., Kyoto, Japan
fDate :
6/1/1996 12:00:00 AM
Abstract :
We have fabricated an InGaAs-GaAs vertical-cavity surface-emitting laser (VCSEL) grown on a GaAs(311)A substrate by molecular beam epitaxy (MBE) and demonstrated continuous wave operation at room temperature. A threshold current density of 80 A/cm/sup 2//well and very stable polarization characteristics up to 2.7 times the threshold were achieved. The polarization state with the highest optical intensity was oriented along the [2~33] direction, which is the crystallographic axis exhibiting the maximum gain. An extinction ratio of more than 12.7 dB was obtained between two orthogonal polarization states. The high and anisotropic gain of a (311)A-oriented VCSEL will drastically improve the device performance by optimization and process engineering.
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser cavity resonators; laser stability; light polarisation; molecular beam epitaxial growth; optical fabrication; optimisation; semiconductor growth; semiconductor lasers; surface emitting lasers; GaAs; GaAs(311)A substrate; InGaAs-GaAs; InGaAs-GaAs vertical-cavity surface-emitting laser; MBE; anisotropic gain; continuous wave operation; crystallographic axis; device performance; extinction ratio; low threshold; maximum gain; molecular beam epitaxy; optical intensity; optimization; orthogonal polarization states; process engineering; room temperature; stable polarization; threshold current density; very stable polarization characteristics; Laser stability; Molecular beam epitaxial growth; Optical polarization; Optical surface waves; Substrates; Surface emitting lasers; Surface waves; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
