• DocumentCode
    971807
  • Title

    MBE growth of AlGaN/GaN HEMTs with high power density

  • Author

    Katzer, D.S. ; Binari, S.C. ; Storm, D.F. ; Roussos, J.A. ; Shanabrook, B.V. ; Glaser, E.R.

  • Author_Institution
    Div. of Electron. Sci. & Technol., Naval Res. Lab., Washington, DC, USA
  • Volume
    38
  • Issue
    25
  • fYear
    2002
  • fDate
    12/5/2002 12:00:00 AM
  • Firstpage
    1740
  • Lastpage
    1741
  • Abstract
    RF-plasma MBE has been used for the growth of undoped Al0.25Ga0.75N/GaN HEMT structures on semi-insulating SiC substrates. Devices with a 1.5 μm gate length have an fT of 10 GHz and have demonstrated an output power density of 6.3 W/mm at 2 GHz. Details of the growth process and device results are presented.
  • Keywords
    III-V semiconductors; UHF field effect transistors; aluminium compounds; gallium compounds; molecular beam epitaxial growth; power HEMT; semiconductor growth; wide band gap semiconductors; 1.5 micron; 10 GHz; 2 GHz; AlGaN-GaN; AlGaN/GaN; HEMTs; MBE growth; RF-plasma MBE; SiC; gate length; power density; semi-insulating SiC substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20021102
  • Filename
    1137500
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=971807