Enhanced carrier injection efficiency from lateral current injection in multiple-quantum-well DFB lasers

Author

Champagne, Alain ; Maciejko, Roman ; Makino, Toshihiko

Author_Institution

Optoelectron. Lab., Ecole Polytech., Montreal, Que., Canada

Volume

8

Issue

6

fYear

1996

fDate

6/1/1996 12:00:00 AM

Firstpage

749

Lastpage

751

Abstract

A bidimensional simulation shows that the lateral carrier injection in etched active region of multiple-quantum-well DFB lasers represents a large fraction of the injected current, leading to improved carrier homogenization in the wells. This increases the average carrier density substantially and provides a much higher gain for the same injected current, depending on detailed device structure.

Keywords

carrier density; distributed feedback lasers; laser theory; quantum well lasers; semiconductor device models; simulation; average carrier density; bidimensional simulation; detailed device structure; enhanced carrier injection efficiency; etched active region; improved carrier homogenization; injected current; lateral carrier injection; lateral current injection; multiple-quantum-well DFB lasers; quantum well lasers; Bandwidth; Carrier confinement; Charge carrier density; Etching; Gratings; Laser feedback; Laser modes; Poisson equations; Quantum well devices; Quantum well lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.502082

Filename

502082