DocumentCode
972041
Title
Magnetization reversal in narrow strips of NiFe thin films
Author
Herd, S.R. ; Ahn, K.Y. ; Kane, S.M.
Author_Institution
IBM Research Center, Yorktown Heights, N.Y.
Volume
15
Issue
6
fYear
1979
fDate
11/1/1979 12:00:00 AM
Firstpage
1824
Lastpage
1826
Abstract
The magnetization reversal in 2-30μm wide 60nm thick NiFe strips takes place basically by the same process in single layers and closely coupled bilayers as shown by Lorentz microscopy. At remnance after saturation very narrow domains of reverse magnetization exist along the long edges and closure domains are formed at the ends. Under application of a reversing field the center of the strip is sectioned into transverse domains by rotation with opposite sense of adjoining blocks. In single layers with low coercivity [Hc ] the formation of charged walls is thought to retard switching, while in high Hc films reversal takes place by sweep of the closure domains from the ends through the strip. Closely coupled bilayers enhance rotation of blocks and the movement across the strip of the reverse domains from the long edges.
Keywords
Magnetic film switching; Permalloy films/devices; Anisotropic magnetoresistance; Coercive force; Couplings; Magnetic films; Magnetic force microscopy; Magnetization reversal; Resists; Strips; Transistors; Transmission electron microscopy;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1979.1060358
Filename
1060358
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