Title :
Variation of diffused boron concentration in the neighbourhood of an oxide-masked edge
Author :
Abbasi, Shuja A. ; Takleh, O. ; Brunnschweiler, A. ; Smith, J.G.
Author_Institution :
University of Southampton, Department of Electronics, Southampton, UK
Abstract :
The concentration of boron diffused into silicon from a vapour source is found to be affected by the presence of masking oxide. Both spreading resistance and infra-red free-carrier emission techniques have been used to study the effect, and a decrease of about 15° in carrier concentration is observed close to the oxide-masked edge.
Keywords :
boron; doping profiles; elemental semiconductors; silicon; Si:B; elemental semiconductors; infra-red free-carrier emission techniques; oxide-masked edge; semiconducting doping; spreading resistance; vapour source;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810405
