DocumentCode
972524
Title
Nanopower Subthreshold MCML in Submicrometer CMOS Technology
Author
Cannillo, Francesco ; Toumazou, Christofer ; Lande, Tor Sverre
Author_Institution
Dept. of Electr. & Electron. Eng., Imperial Coll. of Sci., Technol. & Med., London, UK
Volume
56
Issue
8
fYear
2009
Firstpage
1598
Lastpage
1611
Abstract
This paper presents subthreshold MOS current-mode logic (MCML) circuits implemented in a commercial 0.25-mum CMOS technology. We propose the adoption of bulk-drain-connected pMOS transistors as loads for subthreshold MCML gates. The b-d connection extends the linear operating range of the load, thus increasing the output logic swing of the subthreshold MCML gate. Theoretical and measured results are presented for an MCML inverter and a ten-stage ring oscillator operating at supply voltages below the threshold-voltage value, with power consumption on the order of nanowatts. At a 300-mV supply, the oscillator works at a frequency of 638 Hz with a total power consumption of 345 pW.
Keywords
CMOS integrated circuits; CMOS logic circuits; MOS current-mode logic circuits; nanopower subthreshold MCML; submicrometer CMOS technology; Bulk–drain (b-d) connection; nanopower digital logic; subthreshold MOS current-mode logic (MCML); subthreshold circuits;
fLanguage
English
Journal_Title
Circuits and Systems I: Regular Papers, IEEE Transactions on
Publisher
ieee
ISSN
1549-8328
Type
jour
DOI
10.1109/TCSI.2008.2008275
Filename
4663658
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