• DocumentCode
    972558
  • Title

    Novel oxide planarization for integrated high-speed Si/SiGe heterojunction bipolar transistors

  • Author

    Schreiber, H.U.

  • Author_Institution
    Ruhr-Univ., Bochum, Germany
  • Volume
    43
  • Issue
    6
  • fYear
    1996
  • fDate
    6/1/1996 12:00:00 AM
  • Firstpage
    1036
  • Lastpage
    1037
  • Abstract
    A straightforward oxide planarization for double mesa Si/SiGe heterojunction bipolar transistors (HBTs) is presented. The starting point is a bias-sputtered SiO2 film covering a mesa with an auxiliary layer on top. The following planarization is performed only by wet chemical etching. A planarized multiplexer circuit resulted in bit rates up to 18 Gbit/s
  • Keywords
    Ge-Si alloys; elemental semiconductors; etching; heterojunction bipolar transistors; semiconductor materials; silicon; 18 Gbit/s; Si-SiGe; auxiliary layer; bias-sputtered film; bit rates; double mesa transistors; heterojunction bipolar transistors; high-speed transistors; multiplexer circuit; oxide planarization; wet chemical etching; Circuits; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Multiplexing; Planarization; Silicon germanium; Sputter etching; Tin; Wet etching;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.502144
  • Filename
    502144
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972558