• DocumentCode
    972637
  • Title

    Mid-infrared phase modulation via Stark effect on intersubband transitions in GaAs/GaAlAs quantum wells

  • Author

    Dupont, Emmanuel B. ; Delacourt, Dominique ; Papuchon, Michel

  • Author_Institution
    THOMSON-CSF, Orsay, France
  • Volume
    29
  • Issue
    8
  • fYear
    1993
  • fDate
    8/1/1993 12:00:00 AM
  • Firstpage
    2313
  • Lastpage
    2318
  • Abstract
    Mid-infrared (~10 μm) electrorefractive effects of intersubband transitions in step GaAs/GaAlAs quantum wells are experimentally analyzed. A method for studying infrared electrorefraction of a two-dimensional structure via the Stark effect is used. The anomalous dispersion is measured over the entire spectral range of the transition and is found to be consistent with the Kramers-Kronig relations in the case of a Lorentzian absorption shape. A solution of Maxwell´s equations in the multiquantum well structure is detailed and leads to a good agreement with experimental data. A standard interferometer and a lock-in technique allow a quasi-direct determination of phase and amplitude modulation with very good sensitivity. A theoretical approach based on a Lorentzian model and the solution of Maxwell´s equations for a multiple QW (quantum well) structure agreed well with the data
  • Keywords
    III-V semiconductors; Kramers-Kronig relations; Stark effect; aluminium compounds; amplitude modulation; electro-optical effects; gallium arsenide; light refraction; optical dispersion; optical modulation; phase modulation; semiconductor quantum wells; 10 micron; 2D structure; GaAs-GaAlAs; Kramers-Kronig relations; Lorentzian absorption shape; Lorentzian model; Maxwell´s equations; Stark effect; amplitude modulation; anomalous dispersion; electrorefractive effects; infrared electrorefraction; intersubband transitions; lock-in technique; mid IR; multiquantum well structure; phase modulation; quantum wells; quasi-direct determination; semiconductors; sensitivity; spectral range; standard interferometer; step SQW; Diodes; Electromagnetic wave absorption; Gallium arsenide; Infrared spectra; Laser beams; Oscillators; Phase modulation; Polarization; Resonance; Stark effect;
  • fLanguage
    English
  • Journal_Title
    Quantum Electronics, IEEE Journal of
  • Publisher
    ieee
  • ISSN
    0018-9197
  • Type

    jour

  • DOI
    10.1109/3.245560
  • Filename
    245560