• DocumentCode
    972705
  • Title

    Single-interface enhanced mobility structures by metalorganic chemical vapour deposition

  • Author

    Coleman, J.J. ; Dapkus, P.D. ; Yang, J.J.J.

  • Author_Institution
    Rockwell International, Microelectronics Research and Development Center, Anaheim, USA
  • Volume
    17
  • Issue
    17
  • fYear
    1981
  • Firstpage
    606
  • Lastpage
    608
  • Abstract
    Enhanced mobility effects in single-interface 2-dimensional electron gas heterostructures grown by metalorganic chemical vapour deposition (MOCVD) are reported. The mobility/temperature characteristics of single-interface structures, with and without an undoped spacer to reduce coulomb scattering at the interface, are described.
  • Keywords
    III-V semiconductors; aluminium compounds; carrier mobility; chemical vapour deposition; gallium arsenide; p-n heterojunctions; 2-dimensional electron gas heterostructures; GaAs-GaAlAs heterostructures; III-V semiconductors; coulomb scattering; metalorganic chemical vapour deposition; single-interface enhanced mobility structures;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810426
  • Filename
    4245902
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972705