• DocumentCode
    972844
  • Title

    Improved performance of 4K SRAM by means of CW laser annealing

  • Author

    Teng, T.C. ; Shiau, Y. ; de Ornellas, S. ; Readdie, J. ; Wong, Elaine ; Chang, Gee-Kung ; Ko, Sungyeon ; Skinner, C.

  • Author_Institution
    National Semiconductor, Santa Clara, USA
  • Volume
    17
  • Issue
    18
  • fYear
    1981
  • Firstpage
    627
  • Lastpage
    628
  • Abstract
    A 4K × 1 NMOS static RAM (MM2147) has been successfully fabricated by means of CW laser annealing. The access time was reduced by 10 ns compared with a thermally annealed control with no increase in power dissipation. This report demonstrates the feasibiligy of using CW laser annealing as a potential VLSI process technology.
  • Keywords
    field effect integrated circuits; integrated memory circuits; large scale integration; laser beam annealing; random-access storage; 4K*1 NMOS static RAM; CW laser annealing; VLSI process technology; access time; thermally annealed control;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810440
  • Filename
    4245917
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=972844