Title :
Efficient p-type Si IMPATT diodes for V-band frequencies
Author_Institution :
Technische Universitÿt Mÿnchen, Mÿnchen, West Germany
Abstract :
p-type single-drift IMPATT diodes for V-band frequencies were fabricated by a single diffusion process. The diodes were packaged on a copper heatsink using quartz standoffs and investigated in a resonant cap waveguide structure. The maximum CW output power is 0.5 at 68 GHz with an efficiency of 8.7%
Keywords :
IMPATT diodes; elemental semiconductors; silicon; Cu heat sink; V-band frequencies; elemental semiconductors; p-type Si IMPATT diodes; quartz standoffs; resonant cap waveguide structure; single diffusion process;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810445
