DocumentCode
972906
Title
Continuous model for gate-induced charge in short-channel MOSFETs
Author
Runovc, F.
Author_Institution
Institute of Microwave Technology, Stockholm, Sweden
Volume
17
Issue
18
fYear
1981
Firstpage
636
Lastpage
638
Abstract
The threshold voltage in a short-channel MOS transistor is a sensitive function of the effective channel length, substrate bias and the channel impurity profile. A continuous model is developed in this letter to obtain a simple analytical expression for the above described sensitivities suitable for CAD program implementation. The calculated values for the threshold voltage are compared with the measurements on MOSFETs with effective channel lengths between 9.7 ¿m and 1.2 ¿m.
Keywords
circuit CAD; insulated gate field effect transistors; semiconductor device models; CAD program implementation; channel impurity profile; continuous model; effective channel length; gate-induced charge; short-channel MOSFET; substrate bias; threshold voltage;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810446
Filename
4245923
Link To Document