• DocumentCode
    972971
  • Title

    UHF band high-efficiency linear power amplifier for mobile communication satellites

  • Author

    Sekine, K. ; Dooi, Y. ; Iso, A. ; Funaki, H. ; Takei, I.

  • Author_Institution
    Space Commun. Res. Corp., Tokyo, Japan
  • Volume
    26
  • Issue
    7
  • fYear
    1990
  • fDate
    3/29/1990 12:00:00 AM
  • Firstpage
    441
  • Lastpage
    442
  • Abstract
    A linear MOSFET power amplifier with high efficiency and low intermodulation distortion is developed by using the harmonic control and gate bias optimising technique. An output power of 30 W at 1 dB gain compression and added efficiency of 52% are attained at an operating frequency of 835 MHz.
  • Keywords
    elemental semiconductors; field effect transistor circuits; power amplifiers; radio transmitters; satellite links; silicon; ultra-high-frequency amplifiers; 30 W; 52 percent; 835 Hz; MOSFET power amplifier; Si; UHF band; added efficiency; gain compression; gate bias optimising technique; harmonic control; high-efficiency linear power amplifier; low intermodulation distortion; mobile communication satellites; operating frequency; output power; semiconductors;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900286
  • Filename
    50218