DocumentCode
972991
Title
InGaAsP/InP BH lasers on p-type InP substrates
Author
Nakano, Yoshiaki ; Takahei, K. ; Noguchi, Y. ; Nagai, Hiroto ; Nawata, Koji ; Tokunaga, M.
Author_Institution
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Volume
17
Issue
18
fYear
1981
Firstpage
645
Lastpage
646
Abstract
A 1.55 ¿m InGaAsP/InP BH laser is achieved on a p-type InP substrate resulting in a simple fabrication process. A threshold current as low as 40 mA under CW operation and a pulsed power rating of several hundred mW at 8 A peak current are achieved in buried-heterostructure lasers.
Keywords
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; CW operation; III-V semiconductors; InGaAsP-InP buried-heterostructure lasers; p-type InP substrates;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810453
Filename
4245930
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