Title :
Low threshold channelled-substrate buried crescent InGaAsP lasers emitting at 1.54 ¿m
Author :
Devlin, W.J. ; Walling, R.H. ; Fiddyment, P.J. ; Hobbs, R.E. ; Murrell, D. ; Spillett, R.E. ; Steventon, A.G.
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
Double-heterostructure lasers with crescent-shaped InGaAsP active layers have been fabricated with CW emission of 1.54 ¿m. Lowest CW thresholds are 45¿47 mA for a 200 ¿m long cavity at 25°C. The lasing near-field widths are 2.5¿3.0 ¿m and the spectral widths to 10% of peak are 4¿5 nm under both CW conditions and modulation up to 320 Mbit/s.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.54 mu m; CW thresholds; III-V semiconductors; InGaAsP DH lasers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810457
