• DocumentCode
    973030
  • Title

    Low threshold channelled-substrate buried crescent InGaAsP lasers emitting at 1.54 ¿m

  • Author

    Devlin, W.J. ; Walling, R.H. ; Fiddyment, P.J. ; Hobbs, R.E. ; Murrell, D. ; Spillett, R.E. ; Steventon, A.G.

  • Author_Institution
    British Telecom Research Laboratories, Ipswich, UK
  • Volume
    17
  • Issue
    18
  • fYear
    1981
  • Firstpage
    651
  • Lastpage
    653
  • Abstract
    Double-heterostructure lasers with crescent-shaped InGaAsP active layers have been fabricated with CW emission of 1.54 ¿m. Lowest CW thresholds are 45¿47 mA for a 200 ¿m long cavity at 25°C. The lasing near-field widths are 2.5¿3.0 ¿m and the spectral widths to 10% of peak are 4¿5 nm under both CW conditions and modulation up to 320 Mbit/s.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.54 mu m; CW thresholds; III-V semiconductors; InGaAsP DH lasers;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810457
  • Filename
    4245934
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973030