DocumentCode
973052
Title
Submicrometer Comb-Drive Actuators Fabricated on Thin Single Crystalline Silicon Layer
Author
Takahashi, Kazunori ; Bulgan, Erdal ; Kanamori, Yoshiaki ; Hane, Kazuhiro
Author_Institution
Dept. of Nanomech., Tohoku Univ., Sendai
Volume
56
Issue
4
fYear
2009
fDate
4/1/2009 12:00:00 AM
Firstpage
991
Lastpage
995
Abstract
Electrostatic comb-drive microactuators were fabricated by electron beam lithography on a 260-nm-thick silicon layer of a silicon-on-insulator wafer. The actuators consisted of comb electrodes, springs, and a frame. Two kinds of microactuators with doubly clamped and double-folded springs were designed and fabricated. The comb electrode was as small as 2.5 mum wide and 8 mum long and was composed of 250-nm-wide, 260-nm-thick, and 2-mum-long fingers. The air gap between the fingers was 350 nm. The spring was 250 nm wide, 260 nm thick, and 17.5 mum long, and the spring constant was 0.11 N/m. The force and displacement generated by the microactuator were 2.3 x 10-7N and 1.0 mum, respectively. Applying an ac voltage, the oscillation amplitude became maximum at a frequency of 132 kHz. The mechanical and electrical characteristics of the fabricated actuators were investigated quantitatively.
Keywords
electron beam lithography; elemental semiconductors; microactuators; silicon; silicon-on-insulator; Si; comb electrode; electron beam lithography; electrostatic comb-drive microactuator; frequency 132 kHz; silicon-on-insulator wafer; size 1.0 mum; size 17.5 mum; size 2 mum; size 2.5 mum; size 250 nm; size 260 nm; size 8 mum; submicrometer comb-drive actuator; thin single crystalline silicon layer; Actuators; microelectromechanical devices; micromachining;
fLanguage
English
Journal_Title
Industrial Electronics, IEEE Transactions on
Publisher
ieee
ISSN
0278-0046
Type
jour
DOI
10.1109/TIE.2008.2006934
Filename
4663701
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