• DocumentCode
    973391
  • Title

    In0.53Ga0.47As contact layer for 1.3 ¿m light-emitting diodes

  • Author

    Temkin, H. ; Chin, A.K. ; Digiuseppe, M.A.

  • Author_Institution
    Bell Laboratories, Murray Hill, USA
  • Volume
    17
  • Issue
    19
  • fYear
    1981
  • Firstpage
    703
  • Lastpage
    705
  • Abstract
    Measurements of the specific contact resistance on epitaxially grown layers of p-In1¿xGaxAsyP1¿y as a function of composition demonstrate the resistance minimum of 7×10¿6 ¿cm2 for In0.53Ga0.47As. Growth procedures for the preparation of InGaAsP/InP double-heterostructure LED wafers incorporating such a ternary InGaAs contact layer are described. This contacting technique allows fabrication of high-performance devices with reproducibly low series resistance.
  • Keywords
    III-V semiconductors; contact resistance; gallium arsenide; indium compounds; light emitting diodes; p-n heterojunctions; semiconductor epitaxial layers; In0.53Ga0.47As contact layers; InGaAsP/InP double-heterostructure LED wafers; LED; contact resistance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810493
  • Filename
    4245971
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973391