SEM direct observation of the degradation in Ga(Al)As GRIN-SCH lasers grown on a silicon substrate

The starting of the degradation in GRIN-SCH GaAs lasers grown on a silicon substrate was directly observed by EBIC and CL techniques. The investigation of electron beam induced damage shows that the degradation of these devices starts in the p-n junction before it attains the active layer and before the appearance of dark line defects.