DocumentCode :
973483
Title :
Superior microwave performance of InGaAs JFETs grown by MBE
Author :
Trommer, Dirk ; Umbach, A. ; Passenburg, W. ; Mekonnen, G. ; Unterborsch, Gunter
Author_Institution :
Heinrich Hertz Inst. for Nachrichtentech. Berlin, GmbH, West Germany
Volume :
26
Issue :
11
fYear :
1990
fDate :
5/24/1990 12:00:00 AM
Firstpage :
734
Lastpage :
736
Abstract :
The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration is reported. An optimised MBE process for the gate layer growth is presented. JFETs fabricated by using a self-aligning technique exhibit very high cut-off frequencies of fT=28 GHz and fMAX=38 GHz.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 28 GHz; 38 GHz; InGaAs; InP based optoelectronic integration; JFETs; OEIC; gate layer growth; microwave performance; optimised MBE process; self-aligning technique;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19900479
Filename :
106048
Link To Document :
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