• DocumentCode
    973483
  • Title

    Superior microwave performance of InGaAs JFETs grown by MBE

  • Author

    Trommer, Dirk ; Umbach, A. ; Passenburg, W. ; Mekonnen, G. ; Unterborsch, Gunter

  • Author_Institution
    Heinrich Hertz Inst. for Nachrichtentech. Berlin, GmbH, West Germany
  • Volume
    26
  • Issue
    11
  • fYear
    1990
  • fDate
    5/24/1990 12:00:00 AM
  • Firstpage
    734
  • Lastpage
    736
  • Abstract
    The realisation of high performance InGaAs JFETs designed for InP based optoelectronic integration is reported. An optimised MBE process for the gate layer growth is presented. JFETs fabricated by using a self-aligning technique exhibit very high cut-off frequencies of fT=28 GHz and fMAX=38 GHz.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optoelectronics; junction gate field effect transistors; molecular beam epitaxial growth; semiconductor growth; solid-state microwave devices; 28 GHz; 38 GHz; InGaAs; InP based optoelectronic integration; JFETs; OEIC; gate layer growth; microwave performance; optimised MBE process; self-aligning technique;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19900479
  • Filename
    106048
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973483