• DocumentCode
    973779
  • Title

    Temperature dependence of the transferred electron threshold current in In1¿xGaxAsyP1¿y

  • Author

    Heasman, K.C. ; Hayes, J.R. ; Adams, A.R. ; Greene, P.D.

  • Author_Institution
    University of Surrey, Department of Physics, Guildford, UK
  • Volume
    17
  • Issue
    20
  • fYear
    1981
  • Firstpage
    756
  • Lastpage
    757
  • Abstract
    The threshold current for transferred electron effects in In1¿xGaxAsyP1¿y (0.4 <y = 2.1x <0.9) has been found to increase on cooling from 300 K to 77 K at a rate which is only about one-third of the corresponding rate for GaAs. This suggests that alloy scattering remains effective at high fields.
  • Keywords
    Gunn effect; III-V semiconductors; gallium arsenide; indium compounds; 300K to 77K; In1-xGaxAsyP1-y; alloy scattering; semiconductor; temperature dependence; transferred electron threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810531
  • Filename
    4246010
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=973779