Low-threshold lasing in novel microdisk geometries

Author

Corbett, B. ; Justice, J. ; Considine, L. ; Walsh, S. ; Kelly, W.M.

Author_Institution

Nat. Microelectron. Res. Centre, Univ. Coll. Cork, Ireland

Volume

8

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

855

Lastpage

857

Abstract

We have fabricated arrays of semiconductor microdisks with diameters from 3.5-9 μm using wet chemical etching in combination with epitaxial lift-off and metallic bonding techniques. The microdisks are supported on glass for higher optical confinement and to allow novel annular geometries. The optically pumped microdisks have high-Q (>2000) modes, low-pump thresholds (<20 μW) and multimode lasing at liquid nitrogen temperatures. Successive modes are excited by temperature tuning the bandgap.

Keywords

III-V semiconductors; energy gap; epitaxial growth; etching; gallium arsenide; indium compounds; laser modes; laser tuning; optical fabrication; optical films; quantum well lasers; semiconductor growth; semiconductor laser arrays; 20 muW; 3.5 to 9 mum; InGaAs; InGaAs QW active layer; annular geometries; bandgap; epitaxial lift-off; high-Q modes; liquid nitrogen temperatures; low-pump thresholds; low-threshold lasing; metallic bonding techniques; microdisk geometries; multimode lasing; optical confinement; optically pumped microdisks; semiconductor microdisk laser arrays; temperature tuning; wet chemical etching; Bonding; Chemicals; Geometrical optics; Geometry; Glass; Nitrogen; Optical pumping; Optical tuning; Temperature; Wet etching;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.502249

Filename

502249