DocumentCode
973848
Title
An accurate model of subbreakdown due to band-to-band tunneling and some applications
Author
Endoh, Tetsuo ; Shirota, Riichiroh ; Momodomi, Masaki ; Masuoka, Fujio
Author_Institution
Toshiba Corp., Kawasaki, Japan
Volume
37
Issue
1
fYear
1990
fDate
1/1/1990 12:00:00 AM
Firstpage
290
Lastpage
296
Abstract
An accurate model and a numerical analysis of the subbreakdown phenomenon due to band-to-band tunneling in a thin-gate-oxide n-MOSFET is described. Results calculated by means of this model agree well with experimental results. This model provides a good understanding of the subbreakdown phenomenon. Furthermore, it shows how to design the distribution of impurity density in the drain region in order to suppress the subbreakdown current
Keywords
insulated gate field effect transistors; semiconductor device models; tunnelling; accurate model; band-to-band tunneling; drain region; impurity density distribution design; numerical analysis; subbreakdown current; subbreakdown phenomenon; thin-gate-oxide n-MOSFET; Breakdown voltage; Electric breakdown; Impurities; Leakage current; MOS devices; MOSFET circuits; Nonvolatile memory; Random access memory; Silicon; Tunneling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.43828
Filename
43828
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