Thermo-optical modulation at /spl lambda/=1.5 μm in an /spl alpha/-SiC-/spl alpha/-Si-/spl alpha/-SiC planar guided-wave structure

Author

Cocorullo, G. ; Della Corte, F.G. ; Rendina, I. ; Rubino, A. ; Terzini, E.

Author_Institution

CNR, Naples, Italy

Volume

8

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

900

Lastpage

902

Abstract

A planar waveguide based on an amorphous silicon-amorphous silicon carbide heterostructure is proposed for the realization of passive and active optical components at the wavelengths /spl lambda/=1.3-1.5 μm. The waveguide has been realized by low temperature plasma enhanced chemical vapor deposition and is compatible with the standard microelectronic technologies. Thermo-optical induced modulation at /spl lambda/=1.5 μm is demonstrated in this waveguide. Numerical simulations predict that operation frequencies of about 3 MHz are possible. The measurements have also allowed the determination of the previously unknown thermo-optical coefficient of undoped amorphous silicon at this wavelength.

Keywords

amorphous semiconductors; elemental semiconductors; optical modulation; optical planar waveguides; plasma CVD coatings; silicon; silicon compounds; thermo-optical effects; /spl alpha/-SiC-/spl alpha/-Si-/spl alpha/-SiC planar guided-wave structure; 1.5 micron; 3 MHz; SiC-Si-SiC; active optical components; amorphous silicon-amorphous silicon carbide heterostructure; low temperature plasma enhanced chemical vapor deposition; microelectronic technology; numerical simulation; passive optical components; planar waveguide; thermo-optical modulation; Amorphous materials; Optical devices; Optical planar waveguides; Optical waveguide components; Optical waveguides; Planar waveguides; Plasma chemistry; Plasma measurements; Plasma temperature; Silicon carbide;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.502264

Filename

502264