• DocumentCode
    974068
  • Title

    Advances in the Understanding of the P-N Junction Triode

  • Author

    Pritchard, R.L.

  • Author_Institution
    Texas Instruments, Inc., Dallas, Texas
  • Volume
    46
  • Issue
    6
  • fYear
    1958
  • fDate
    6/1/1958 12:00:00 AM
  • Firstpage
    1130
  • Lastpage
    1141
  • Abstract
    During the past ten years the junction triode has been studied extensively in attempts to improve the understanding of the device. The resulting increase in understanding has made possible improvements in both device design and in transistor-circuit design. Highlights of these studies including references to approximately 100 papers, are reviewed in this paper from the point of view of relating electrical characteristics to the physical construction of the device. First the ideal-diode model resulting from Shockley´s 1949 analysis of the junction triode is reviewed, Then the differences between experimentally observed electrical characteristics and the corresponding characteristics of the ideal model, together with their explanations presented in the literature, are described, The dc characteristics are discussed first, followed by a detailed description of the increased understanding of the small-signal parameters. Other topics reviewed briefly include the effect of non-one-dimensional current flow, and switching characteristics of the triode.
  • Keywords
    Electric variables; Electron devices; Germanium alloys; Impurities; Instruments; P-n junctions; Senior members; Silicon alloys; Solid state circuits; Transistors;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1958.286895
  • Filename
    4065454