DocumentCode
974166
Title
SOI Schottky barrier tunnelling transistors fabricated with spacer technology
Author
Sun, L. ; Liu, X.Y. ; Hou, D.Q. ; Han, R.Q.
Author_Institution
Inst. of Microelectron., Peking Univ., Beijing, China
Volume
40
Issue
8
fYear
2004
fDate
4/15/2004 12:00:00 AM
Firstpage
511
Lastpage
513
Abstract
Schottky barrier tunnelling transistors with gate length of 70 nm have been fabricated using spacer technology. The silicon on insulator (SOI) structure has been used to replace the silicon substrate. The thermal emission leakage current is reduced owing to decrease of the area of the source/drain Schottky contact.
Keywords
Schottky barriers; Schottky gate field effect transistors; elemental semiconductors; leakage currents; silicon; silicon-on-insulator; tunnel transistors; 70 nm; SOI Schottky barrier tunnelling transistors; Si; silicon on insulator structure; silicon substrate; source/drain Schottky contact; spacer technology; thermal emission leakage current;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:20040312
Filename
1293653
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