A DC-to-100-GHz InP HEMT 1:2 distributor IC using distributed amplification

Author

Imai, Y. ; Kimura, S. ; Enoki, Tsutomu ; Umeda, Y.

Author_Institution

NTT LSI Labs., Kanagawa, Japan

Volume

6

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

256

Lastpage

258

Abstract

The authors describe a 1:2 distributor IC for future very-high-speed optical communication systems. Wideband performance is obtained by applying a distributed amplification technique to a differential circuit. This IC uses a 0.1-μm-gate-length InAlAs-InGaAs-InP HEMT and coplanar waveguide technology. It has a 3-dB bandwidth of 100 GHz with a low frequency gain of -2.5 dB. Up to 100 GHz, return loss and isolation are better than -10 dB and -20 dB, respectively. The authors believe the bandwidth is the widest ever reported for multi-RF-port wideband IC´s.

Keywords

HEMT integrated circuits; III-V semiconductors; coplanar waveguides; distributed amplifiers; field effect MIMIC; indium compounds; optical communication equipment; wideband amplifiers; -10 dB; -2.5 dB; 0 to 100 GHz; 0.1 micron; 100 GHz; 1:2 distributor IC; CPW technology; InAlAs-InGaAs-InP; InP HEMT; coplanar waveguide technology; differential circuit; distributed amplification; multi-RF-port ICs; very-high-speed optical communication; wideband performance; Bandwidth; Coplanar waveguides; Frequency; HEMTs; Indium phosphide; Isolation technology; Optical fiber communication; Optical waveguides; Photonic integrated circuits; Wideband;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.502285

Filename

502285