• DocumentCode
    974213
  • Title

    Multiterminal P-N-P-N Switches

  • Author

    Aldrich, R.W. ; Holonyak, N., Jr.

  • Author_Institution
    General Electric Co., Syracuse, N.Y.
  • Volume
    46
  • Issue
    6
  • fYear
    1958
  • fDate
    6/1/1958 12:00:00 AM
  • Firstpage
    1236
  • Lastpage
    1239
  • Abstract
    A silicon p-n-p-n switch (two or three terminal) whose operation depends in part upon electric field transport of minority carriers is described. In a p-n-p-n structure relying upon an electric field to increase one internal alpha sufficiently to produce switching, the "turn-on" current is related to minority-carrier lifetime (diffusion length) and to the resistivity, area, and base width of the section depending upon field transport. It is shown that at least one base region can be of relatively large dimension. This increases "turn-on" current, "on" impedance, and "turn-off" time, but allows greater freedom in some aspects of device design and fabrication at not a great increase of the characteristics mentioned. In particular, two and three terminal p-n-p-n switches, dependent in part upon field transport, can be designed as signal devices or as power devices. Certain features of three-terminal p-n-p-n operation are discussed and experimental results presented.
  • Keywords
    Character generation; Conductivity; Current density; Electrons; P-n junctions; Silicon; Spontaneous emission; Switches; Voltage;
  • fLanguage
    English
  • Journal_Title
    Proceedings of the IRE
  • Publisher
    ieee
  • ISSN
    0096-8390
  • Type

    jour

  • DOI
    10.1109/JRPROC.1958.286909
  • Filename
    4065468