DocumentCode
974213
Title
Multiterminal P-N-P-N Switches
Author
Aldrich, R.W. ; Holonyak, N., Jr.
Author_Institution
General Electric Co., Syracuse, N.Y.
Volume
46
Issue
6
fYear
1958
fDate
6/1/1958 12:00:00 AM
Firstpage
1236
Lastpage
1239
Abstract
A silicon p-n-p-n switch (two or three terminal) whose operation depends in part upon electric field transport of minority carriers is described. In a p-n-p-n structure relying upon an electric field to increase one internal alpha sufficiently to produce switching, the "turn-on" current is related to minority-carrier lifetime (diffusion length) and to the resistivity, area, and base width of the section depending upon field transport. It is shown that at least one base region can be of relatively large dimension. This increases "turn-on" current, "on" impedance, and "turn-off" time, but allows greater freedom in some aspects of device design and fabrication at not a great increase of the characteristics mentioned. In particular, two and three terminal p-n-p-n switches, dependent in part upon field transport, can be designed as signal devices or as power devices. Certain features of three-terminal p-n-p-n operation are discussed and experimental results presented.
Keywords
Character generation; Conductivity; Current density; Electrons; P-n junctions; Silicon; Spontaneous emission; Switches; Voltage;
fLanguage
English
Journal_Title
Proceedings of the IRE
Publisher
ieee
ISSN
0096-8390
Type
jour
DOI
10.1109/JRPROC.1958.286909
Filename
4065468
Link To Document