• DocumentCode
    974231
  • Title

    1.3 ¿m InP/InGaAsP planar avalanche photodiodes

  • Author

    Shirai, Tokimasa ; Osaka, F. ; Yamasaki, Shintaro ; Nakajima, Kensuke ; Kaneda, Tadahiro

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    17
  • Issue
    22
  • fYear
    1981
  • Firstpage
    826
  • Lastpage
    827
  • Abstract
    An InP/InGaAsP planar avalanche photodiode operating at a wavelength of 1.3 ¿m has been fabricated by using Be implantation and a difference of impurity concentrations between two n-InP epitaxial layers. A sufficient guard ring effect is demonstrated by a photoresponse, and an avalanche gain of 110 is obtained at an initial photocurrent of 0.35 ¿A.
  • Keywords
    III-V semiconductors; avalanche photodiodes; gallium arsenide; indium compounds; infrared detectors; 1.3 micron wavelength; Be implantation; III-V semiconductor; InP/InGaAsP planar avalanche photodiode; guard ring effect; impurity concentrations; n-InP epitaxial layers; photocurrent; photoresponse;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810575
  • Filename
    4246056
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974231