DocumentCode
974276
Title
Improved Electronic Performance of HfO2/ SiO2 Stacking Gate Dielectric on 4H SiC
Author
Kuan Yew Cheong ; Moon, Jeong Hyun ; Park, Tae Joo ; Kim, Jeong Hwan ; Hwang, Cheol Seong ; Kim, Hyeong Joon ; Bahng, Wook ; Kim, Nam-Kyun
Author_Institution
Univ. Sains Malaysia, Nibong Tebal
Volume
54
Issue
12
fYear
2007
Firstpage
3409
Lastpage
3413
Abstract
The MOS characteristics of an atomic layer-deposited HfO2/N2O-nitrided SiO2 stacking gate dielectric on n-type 4H SiC (0001) has been investigated. Three different thicknesses of nitrided SiO2 (2, 4, and 6 nm) have been sandwiched between HfO2 and SiC. The electronic performance of the stacking dielectric depends on the thickness of the nitrided SiO2. Among the stacking dielectrics, the lowest effective oxide charge and interface-trap density as well as the most reliable dielectric has been demonstrated by a sample with the thickest nitrided . The reason for this observation is proposed.
Keywords
MIS devices; MOS capacitors; hafnium compounds; high-k dielectric thin films; interface states; silicon compounds; wide band gap semiconductors; 4H SiC (0001); HfO2-SiO2-SiC - Interface; MOS characteristics; effective oxide charge; electronic performance; interface-trap density; reliable dielectric; size 2 nm; size 4 nm; size 6 nm; stacking gate dielectric; Atomic layer deposition; Dielectric materials; Dielectric substrates; Hafnium oxide; Leakage current; Materials science and technology; Moon; Power engineering and energy; Silicon carbide; Stacking; High dielectric-constant gate; leakage current; nitridation; reliability;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2007.908545
Filename
4383019
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