A large-signal GaAs MESFET model for nonlinear circuit simulation

Author

Imam, Mohamed ; Osman, Mohamed A. ; Prieto, Yolanda

Author_Institution

Sch. of Electr. Eng. & Comput. Sci., Washington State Univ., Pullman, WA, USA

Volume

2

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

135

Lastpage

137

Abstract

A GaAs MESFET large-signal model suitable for use in time-domain circuit simulation CAD tools such as PSPICE has been developed. The improved model includes accurate analytic representation of the transconductance and conductance dependence upon the operating voltages. The new model gives better fit to GaAs MESFET I-V characteristics over a wider bias voltage range compared with the Curtice quadratic model. It also provides a simpler and more efficient parameter acquisition procedure in comparison to the TriQuint model. The procedure for extracting the model parameters using the bias dependence of the small-signal elements is also described.<>

Keywords

III-V semiconductors; Schottky gate field effect transistors; circuit analysis computing; gallium arsenide; nonlinear network analysis; semiconductor device models; solid-state microwave devices; time-domain analysis; CAD tools; GaAs; I-V characteristics; MESFET model; PSPICE; bias dependence; bias voltage range; conductance dependence; large-signal model; nonlinear circuit simulation; parameter acquisition procedure; small-signal elements; time-domain circuit simulation; transconductance; Circuit simulation; Equations; Gallium arsenide; MESFET circuits; Nonlinear circuits; Predictive models; SPICE; Time domain analysis; Transconductance; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.129440

Filename

129440