Low-Frequency-Noise Spectroscopy of SIMOX and Bonded SOI Wafers

Author

Kushner, Vadim A. ; Park, Kihoon ; Schroder, Dieter K. ; Thornton, Trevor J.

Author_Institution

Freescale Semicond. Inc., Tempe

Volume

54

Issue

12

fYear

2007

Firstpage

3378

Lastpage

3382

Abstract

Pseudo-MOSFET structures with metal source, drain, and guard electrodes are used to measure the low-frequency-noise characteristics of Separation by IMplantation of OXygen (SIMOX) and bonded silicon-on-insulator (SOI) wafers. The noise power spectra in the devices made from bonded SOI wafers are almost an order of magnitude lower than those made from SIMOX wafers. This is attributed to the lower interface trap density in the bonded wafers, which is extracted using the unified correlated model. The proposed method can be used to determine the 1/f noise characteristics of SOI wafers prior to circuit fabrication.

Keywords

1/f noise; MOSFET; SIMOX; integrated circuit measurement; integrated circuit noise; silicon-on-insulator; 1/f noise characteristics; SIMOX wafers; bonded SOI wafers; circuit fabrication; interface trap density; low-frequency-noise spectroscopy; pseudo-MOSFET structures; separation by implantation of oxygen; silicon-on-insulator wafers; unified correlated model; Electrodes; Low-frequency noise; MOSFETs; Oxygen; Probes; Semiconductor device noise; Silicon on insulator technology; Spectroscopy; Substrates; Wafer bonding; Buried-oxide (BOX) traps; low-frequency noise (LFN); pseudo-MOSFET; silicon-on-insulator (SOI);

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2007.908894

Filename

4383035