Title :
A Novel Blocking Technology for Improving the Short-Channel Effects in Polycrystalline Silicon TFT Devices
Author :
Lin, Jyi-Tsong ; Eng, Yi-Chuen
Author_Institution :
Nat. Sun Yat-Sen Univ., Kaohsiung
Abstract :
An original blocking technology is proposed for improving the short-channel characteristics of polycrystalline silicon thin-film transistors (poly-Si TFTs). In particular, two types of modified devices called poly-Si TFT with block oxide and poly-Si on partial insulator (POPI)-TFT are designed for the first time in this field to enhance device performance. The proposed TFT structures can significantly reduce short-channel effects when compared with a thick source/drain (S/D) poly-Si TFT (i.e., the fully depleted TFT). In addition, an ultrathin (UT) S/D structure (UT-TFT) is designed to verify that the block oxide TFT devices do achieve improved performance without needing the thin active layers and ultrashallow junction depth. Also, the POPI-TFT is found to reduce the thermal instability through its natural body-tied scheme.
Keywords :
silicon; silicon-on-insulator; thin film transistors; POPI-TFT; Si - Interface; UT-TFT; block oxide TFT device; blocking technology; poly-Si on partial insulator; polycrystalline silicon TFT device; short-channel effects; thin-film transistor; ultrathin structure; Active matrix liquid crystal displays; Active matrix organic light emitting diodes; Active matrix technology; Degradation; Insulation; Liquid crystal displays; Silicon on insulator technology; Stability; Thermal conductivity; Thin film transistors; Blocking technology; polycrystalline silicon thin-film transistors (poly-Si TFTs); short-channel effects (SCEs); small-size displays;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2007.908893
