Complementary HBT push-pull amplifier by selective MBE

Author

Kobayashi, K.W. ; Umemoto, D.K. ; Velebir, J.R. ; Oki, A.K. ; Streit, D.C.

Author_Institution

TRW, Redondo Beach, CA, USA

Volume

2

Issue

4

fYear

1992

fDate

4/1/1992 12:00:00 AM

Firstpage

149

Lastpage

150

Abstract

Microwave performance results are presented of the first monolithically integrated GaAs-AlGaAs complementary HBT push-pull amplifier fabricated using selective molecular beam epitaxy and a merged HBT process. The push-pull amplifier integrates four n-p-n transistors with one p-n-p transistor on the same GaAs chip. The amplifier has a sharp DC characteristic curve with no crossover offset, a voltage swing of 6.3 V using a 9-V supply, and a linear voltage gain of 20. The bandwidth is DC to 2.5 GHz, with a saturated output power of 7.4 dBm at 2.5 GHz.<>

Keywords

III-V semiconductors; MMIC; bipolar integrated circuits; gallium arsenide; heterojunction bipolar transistors; microwave amplifiers; molecular beam epitaxial growth; wideband amplifiers; 2.5 GHz; 9 V; DC characteristic curve; GaAs-AlGaAs; HBT push-pull amplifier; MMIC; complementary amplifier; merged HBT process; molecular beam epitaxy; n-p-n transistors; p-n-p transistor; selective MBE; Bandwidth; Gain; Gallium arsenide; Heterojunction bipolar transistors; Microwave amplifiers; Microwave transistors; Molecular beam epitaxial growth; Power amplifiers; Power generation; Voltage;

fLanguage

English

Journal_Title

Microwave and Guided Wave Letters, IEEE

Publisher

ieee

ISSN

1051-8207

Type

jour

DOI

10.1109/75.129444

Filename

129444