DocumentCode
974758
Title
Waveguide cavity FET oscillator
Author
Materka, Andrzej ; Mizushina, S.
Author_Institution
Shizuoka University, Research Institute of Electronics, Hamamatsu, Japan
Volume
17
Issue
24
fYear
1981
Firstpage
902
Lastpage
904
Abstract
A new single-tuned oscillator, applicable to power combining circuits, is described in which a probe antenna is used to provide coupling between an active device and the cavity. It is shown that output power, oscillation frequency and injection locking range of the oscillator can be controlled independently in the circuit design. The experiments with low-power FET oscillators demonstrate output power of 44 mW at 9.2 GHz and DC-RF conversion efficiency of 33.2% from a single-device oscillator and about 100% of power combining efficiency in the case of two- and three-device circuits.
Keywords
cavity resonators; field effect transistor circuits; gallium arsenide; microwave oscillators; solid-state microwave circuits; 44 mV output power; 9.2 GHz; GaAs; SHF; active device; coupling; low-power FET oscillators; microwave oscillators; probe antenna; single-tuned oscillator; waveguide cavity FET oscillator;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810629
Filename
4246112
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