DocumentCode
974864
Title
Excess-noise and receiver sensitivity measurements of In0.53Ga0.47As/InP avalanche photodiodes
Author
Forrest, Stephen R. ; Williams, G.F. ; Kim, O.K. ; Smith, R.G.
Author_Institution
Bell Laboratories, Murray Hill, USA
Volume
17
Issue
24
fYear
1981
Firstpage
917
Lastpage
919
Abstract
We report the results of excess-noise and normalised receiver sensitivity measurements for In0.53Ga0.47As/InP avalanche photodiodes for use in the ¿=0.95 ¿m to 1.65 ¿m spectral region. The excess-noise measurements are consistent with a hole-to-electron ionisation rate ratio in InP of ~ 0.4. The receiver sensitivity, measured at 45 Mbit/s and 10¿9 bit-error-rate, was ¿53.2 dBm at a gain of 20 assuming unity quantum efficiency for the detector. This sensitivity is the highest reported at ¿=1.3 ¿m and represents an improvement over a PIN detector using the same amplifier.
Keywords
III-V semiconductors; avalanche photodiodes; electron device noise; gallium arsenide; indium compounds; receivers; sensitivity; -53.2 dBm receiver sensitivity; 0.95 micron to 1.65 micron; GaAs; In compounds; In0.53Ga0.47As/InP avalanche photodiodes; excess-noise measurements; normalised receiver sensitivity measurements; spectral region;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810639
Filename
4246122
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