• DocumentCode
    974897
  • Title

    Effect of substrate orientation on electrical properties of LPE-grown InP

  • Author

    Akita, K. ; Yamaguchi, Akira ; Nakajima, Kensuke ; Takanohashi, T.

  • Author_Institution
    Fujitsu Laboratories Ltd., Kawasaki, Japan
  • Volume
    17
  • Issue
    24
  • fYear
    1981
  • Firstpage
    921
  • Lastpage
    922
  • Abstract
    The carrier concentrations of LPE-grown layers on (111)B substrates are about twice that of layers grown simultaneously on (100) substrates from the same solution. The analysis shows that the distribution coefficient for donor impurity is about 2.5 times larger in the case of (111)B face than that of (100) face.
  • Keywords
    III-V semiconductors; carrier density; doping profiles; electronic conduction in crystalline semiconductor thin films; indium compounds; liquid phase epitaxial growth; semiconductor epitaxial layers; In compounds; LPE-grown InP; carrier concentrations; donor impurity distribution coefficient; electrical properties; substrate orientation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810642
  • Filename
    4246125
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=974897