• DocumentCode
    975104
  • Title

    GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide

  • Author

    Abe, Y. ; Kishino, Katsumi ; Suematsu, Yasuharu ; Arai, Shigehisa

  • Author_Institution
    Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
  • Volume
    17
  • Issue
    25
  • fYear
    1981
  • Firstpage
    945
  • Lastpage
    947
  • Abstract
    A novel GaInAsP/InP integrated laser with butt-jointed built-in distributed-Bragg-reflection waveguide (BJB-DBR integrated laser for short) is proposed and demonstrated. In this structure, it is found theoretically that an efficient coupling of 98% between the active and butt-jointed external waveguides is available by matching the propagation constants and the field profiles of both waveguides, which gives relatively larger fabrication tolerance. Prototype BJB-DBR integrated lasers with emitting wavelength of 1.55 ¿m were fabricated, and single-longitudinal-mode operation was obtained at room temperature.
  • Keywords
    III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor junction lasers; GaInAsP/InP integrated laser; III-V semiconductors; butt-jointed built-in distributed-Bragg reflection waveguide; field profiles; propagation constants;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810661
  • Filename
    4246145