60 GHz high-efficiency InP pulsed TEO

The letter describes the fabrication and assessment of indium phosphide devices designed for high peak-power pulsed operation at millimetre-wave frequencies. The importance of the cathode contact properties for this device are discussed, together with brief details of the n-n+ material growth parameters. An outline of the device fabrication technology is given before the resultant device RF performance characteristics are presented. It is shown that peak output powers as high as 1.2 W and DC to RF conversion efficiencies of up to 12% can be realised at 60 GHz.