Title :
High-sensitivity, high-speed InGaAs photoconductive detector
Author_Institution :
Dept. of Electr. & Comput. Eng., George Mason Univ., Fairfax, VA, USA
fDate :
5/24/1990 12:00:00 AM
Abstract :
In0.53Ga0.47As photoconductive detectors with low dark current and high speed are obtained by multiple energy H bombardment on p-type material. The dark current of the detectors is 10 mu A, the detectivity at 1.31 mu m is 1 A/W and the bandwidth is 1.8 GHz at a source-drain bias of 6 V for 5 mu m contact spacing.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; photoconducting devices; photodetectors; 1.31 micron; 1.8 GHz; 10 muA; 6 V; In 0.53Ga 0.47As; contact spacing; high sensitivity type; high-speed; low dark current; multiple energy H bombardment; p-type material; photoconductive detector; source-drain bias;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900494
