Title :
Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 ¿m
Author :
Utaka, K. ; Akiba, Shigeyuki ; Sakai, Kenji ; Matsushima, Y.
Author_Institution :
KDD Research & Development Laboratories, Tokyo, Japan
Abstract :
Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 ¿m was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 1.0 Å/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.
Keywords :
III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; 1.57 Mu m wavelength; 500 Mbit/s; DC threshold; III-V semiconductors; deeply modulated condition; distributed-feedback buried-heterostructure InGaAsP/InP lasers; single longitudinal mode operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810672
